收藏本站
POWEREX, INC., 200 E. HILLIS STREET, YOUNGWOOD, PENNSYLVANIA 15697-1800 (724) 925-7272
MG600J2YS61A
DUAL IGBTMOD?
COMPACT IGBT SERIES MODULE
600 AMPERES/600 VOLTS
1000
TRANSFER CHARACTERISTICS
(TYPICAL)
10 4
TURN-OFF TIME VS.
COLLECTOR CURRENT
(TYPICAL)
10 4
TURN-ON TIME VS.
COLLECTOR CURRENT
(TYPICAL)
800
600
V CE = 5V
T J = 25°C
T J = 125°C
T J = -40°C
V CC = 300V
V GE = ±15V
R G = 5.1 ?
T J = 25°C
T J = 125°C
400
200
10 3
V CC = 300V
V GE = ±15V
R G = 5.1 ?
T J = 25°C
T J = 125°C
10 3
0
0
2
4
6
8
10
12
10 2
0
100 200 300 400 500 600 700
10 2
0
100 200 300 400 500 600 700
10 4
10 3
GATE-EMITTER VOLTAGE, V GE , (VOLTS)
TURN-OFF DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
V CC = 300V
V GE = ±15V
R G = 5.1 ?
T J = 25°C
T J = 125°C
10 4
10 3
COLLECTOR CURRENT, I C , (AMPERES)
TURN-ON DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
V CC = 300V
V GE = ±15V
R G = 5.1 ?
T J = 25°C
T J = 125°C
10 3
10 2
COLLECTOR CURRENT, I C , (AMPERES)
FALL TIME VS.
COLLECTOR CURRENT
(TYPICAL)
V CC = 300V
V GE = ±15V
R G = 5.1 ?
T J = 25°C
T J = 125°C
10 2
0
100 200 300 400 500 600 700
10 2
0
100 200 300 400 500 600 700
10 1
0
100 200 300 400 500 600 700
10 3
10 2
COLLECTOR CURRENT, I C , (AMPERES)
RISE TIME VS.
COLLECTOR CURRENT
(TYPICAL)
V CC = 300V
V GE = ±15V
R G = 5.1 ?
T J = 25°C
T J = 125°C
10 4
10 3
COLLECTOR CURRENT, I C , (AMPERES)
TURN-OFF TIME VS.
GATE RESISTANCE
(TYPICAL)
V CC = 300V
V GE = ±15V
I C = 600A
T J = 25°C
T J = 125°C
10 4
10 3
COLLECTOR CURRENT, I C , (AMPERES)
TURN-ON TIME VS.
GATE RESISTANCE
(TYPICAL)
V CC = 300V
V GE = ±15V
I C = 600A
T J = 25°C
T J = 125°C
10 1
0
100 200 300 400 500 600 700
10 2
0
5
10
15
20
25
10 2
0
5
10
15
20
25
4
COLLECTOR CURRENT, I C , (AMPERES)
GATE RESISTANCE, R G , ( ? )
GATE RESISTANCE, R G , ( ? )
5/05
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MG600Q2YS60A IGBT MOD CMPCT 1200V 600A
MG800J2YS50A IGBT MOD CMPCT 600V 800A
MIAA10WB600TMH MODULE IGBT CBI
MIAA10WD600TMH MODULE IGBT CBI
MIAA10WE600TMH MODULE IGBT CBI
MIAA10WF600TMH MODULE IGBT CBI
MIAA15WB600TMH MODULE IGBT CBI
MIAA15WD600TMH MODULE IGBT CBI
相关代理商/技术参数
MG600Q1US41 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG600Q1US51 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
MG600Q1US59A 制造商:MITSUBISHI 制造商全称:Mitsubishi Electric Semiconductor 功能描述:HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
MG600Q1US61 制造商:TOSHIBA 制造商全称:Toshiba Semiconductor 功能描述:TOSHIBA IGBT Module Silicon N Channel IGBT
MG600Q2YS60A 功能描述:IGBT MOD CMPCT 1200V 600A RoHS:是 类别:半导体模块 >> IGBT 系列:IGBTMOD™ 标准包装:10 系列:GenX3™ IGBT 类型:PT 配置:单一 电压 - 集电极发射极击穿（最大）:600V Vge, Ic时的最大Vce（开）:1.4V @ 15V，100A 电流 - 集电极 (Ic)（最大）:430A 电流 - 集电极截止（最大）:100µA Vce 时的输入电容 (Cies):31nF @ 25V 功率 - 最大:1000W 输入:标准 NTC 热敏电阻:无 安装类型:底座安装 封装/外壳:SOT-227-4，miniBLOC 供应商设备封装:SOT-227B
MG601 制造商:Thomas & Betts 功能描述:GUIDE PIN,ALL PKON SERIES
MG61D 制造商:MICRO-ELECTRONICS 制造商全称:Micro Electronics 功能描述:SOLID STATE INDICATORS ARE ENCAPSULATED IN RECTANGULAR EPOXY PACKAGE
MG6330 制造商:TT Electronics/ Semelab 功能描述:TRANSAUDIONPN230V15ATO-3P 制造商:TT Electronics/ Semelab 功能描述:TRANS,AUDIO,NPN,230V,15A,TO-3P 制造商:SEMELAB 功能描述:TRANS,AUDIO,NPN,230V,15A,TO-3P; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:230V; Transition Frequency Typ ft:60MHz; Power Dissipation Pd:200W; DC Collector Current:15A; DC Current Gain hFE:70; No. of Pins:3 ;RoHS Compliant: Yes